深圳市维品佳科技有限公司
手机:152-1871-9208
地址:深圳市福田区华强电子世界3号楼一楼

100V场效应管N沟道TSS052V10P
Features:特点:
Advanced Trench Technology, 先进的沟渠技术
Excellent Switching Characteristics,出色的开关特性
Extended Safe Operating Area,扩展安全操作区
VDSS=100V, ID=150AV,DSS = 100伏,内径= 150安
Ultra Low Gate Charge:Qg=64nC (Typ.) ,超低栅极电荷:Qg=64nC(典型值。)
Rds(on):4.2m (Typ.) @VG=10V ,Rds(开):4.2米(典型值。)@VG=10V
100% Avalanche Tested,100%雪崩测试
| Parameter | Symbol | Value | Unit | |
| Drain-to-Source Voltage | 100 | V | ||
| Gate-to-Source Voltage | ±20 | V | ||
| Continuous Drain | TC = 25°C | ID | 150 | A |
| Current (1) | T = 100°C | 90 | ||
| Pulsed Drain Current (2) | IDM | 72 | A | |
| Avalanche Energy (3) | EAS | 600 | mJ | |
| Power Dissipation (4) | c=25℃ | PD | 192 | W |
| Tc=100℃ | 76 | |||
| Junction & Storage Temperature Range | TJ, TSTG | -55 to 150 | ℃ | |
Thermal Performance
| Parameter | Symbol | Typ. | Max. | Unit |
| Thermal Resistance, Junction-to-Ambient | RJA | 45 | 55 | ℃/W |
| Thermal Resistance, Junction-to-Case | RJC | 0.4 | 0.8 | ℃/W |