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严选基材650V塑封场效应管MOS管N沟道TSS12N65F
发布时间：2026-03-10 15:52:41 点击次数：3
TSS12N65F-650V N-Channel MOSFET
Features:
Low Intrinsic Capacitances
Excellent Switching Characteristics
Extended Safe Operating Area
Unrivalled Gate Charge :Qg= 44nC (Typ.)
BVDSS=650V,ID=12A
RDS(on) :0.68 Ω (Max) @VG=10V
100% Avalanche Tested
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit | |
| VDSS | Drain-Source Voltage | 650 | V | |
| ID | Drain Current | Tj=25℃ | 12 | A |
| Tj=100℃ | 7.9 | |||
| VGS(TH) | Gate Threshold Voltage | ±30 | V | |
| EAS | Single Pulse Avalanche Energy (note1) | 660 | mJ | |
| IAR | Avalanche Current (note2) | 12 | A | |
| PD | Power Dissipation (Tj=25℃) | 44 | W | |
| Tj | Junction Temperature(Max) | 150 | ℃ | |
| Tstg | Storage Temperature | -55~+150 | ℃ | |
| TL | Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds | 300 | ℃ |
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